Accession Number:

ADP011504

Title:

Atomic and Electronic Structures of Glassy Ge sub x Se sub 1-x Around the Stiffness Threshold Composition

Descriptive Note:

Corporate Author:

MARBURG UNIV (GERMANY F R) PHYSIKALISCHES INST

Personal Author(s):

• Hosokawa, S.

Report Date:

2001-06-01

Pagination or Media Count:

16.0

Abstract:

Anomalous x-ray scattering experiments on glassy GexSe1-x have been carried out at energies close to the Ge and Se K edges at concentrations close to the onset and completion of the rigidity percolation threshold x 0.195 and 0.23. The total structure factors SQ show rapid changes in both the position and intensity of the prepeak around 10 nm-1, while remaining almost unchanged in the other Q ranges. The differential structure factors delta SQQ obtained have characteristic features of their own. A detailed comparison among them suggests that the prepeak originates from only the Ge-Ge correlation. On the basis of the concentration dependence of the spectra and the existing partial structure factors of glassy GeSe2 obtained by Petri et al, the origin of the prepeak is discussed. Valence and conduction-band electronic density of states of glassy GexSe1-x 0 x 0.33 were also investigated by measuring the ultraviolet photoemission and inverse photoemission spectra.

Descriptors:

• *PHOTOELECTRIC EMISSION
• *ATOMIC STRUCTURE
• SYMPOSIA
• ULTRAVIOLET RADIATION
• CRYSTALS
• GLASS
• GERMANY
• X RAY SCATTERING
• VALENCE
• ELECTRON DIFFRACTION
• SELENIUM ALLOYS
• GERMANIUM COMPOUNDS

Subject Categories:

• Electrooptical and Optoelectronic Devices
• Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE