Accession Number:

ADP011360

Title:

Film Stress and Adhesion Characteristics of Passivation Layers for Thermal Ink-Jet Printhead

Descriptive Note:

Conference proceedings

Corporate Author:

INDUSTRIAL TECHNOLOGY RESEARCH INST CHUTUNG HSINCHU (TAIWAN) OPTO-ELECTRONICSAND SYSTEMS LABS

Report Date:

2000-07-01

Pagination or Media Count:

7.0

Abstract:

Amorphous, hydrogenated silicon carbide a-SiCH deposited by plasma-enhanced-chemical-vapor-deposition PECVD has been used as the most important film of passivation layers in a thermal ink-jet printhead. When the printhead was thermal-cycled from room temperature to about 400 degrees Celsius, the a-SiCH film is sustained by a variety of thermal and mechanical stresses that are detrimental to its integrity. Thermal stress changes of a-SiCH films were varied with different CH4SiH4 gas ratios. Microstructure investigation was mainly achieved by FTIR technique. Less Variation of the Si-H absorption bond causes less thermal stress change. Thin-film adhesion is an important problem in thermal ink-jet printhead between the Ta thin film and a-SiCH films. A qualitative measure of film adhesion can be made with the scratch tester. The adhesive critical load and Ta coating failure modes on a-SiCH were acquired to examine the film adhesion of these two investigated films. The adhesion depends on the nature of the interfacial region, which depends on the interactions between the depositing Ta thin film and the surface a-SiCH films. An increased effective contact area in the interfacial region promotes a good adhesion.

Subject Categories:

  • Printing and Graphic Arts
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE