Luminescence of the InGaN/GaN Blue Light-Emitting Diodes
NATIONAL CENTRAL UNIV CHUNG-LI (TAIWAN) INST OF OPTICAL SCIENCES
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InGaNGaN double heterostructure DH and multiple quantum wellsMQW light-emitting diodes were grown by metalorganic vapor phase epitaxyMOVPE. Band gap narrowing of the PL spectra for the InGaNGaN MQW LEDs can be observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibit a blue-shift phenomenon when increasing the injection current and laser power, respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Stark effectPQCSE and a blue-shift mechanism of band-filling and charge screening effects.
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