Accession Number:

ADP011314

Title:

Luminescence of the InGaN/GaN Blue Light-Emitting Diodes

Descriptive Note:

Corporate Author:

NATIONAL CENTRAL UNIV CHUNG-LI (TAIWAN) INST OF OPTICAL SCIENCES

Personal Author(s):

• Sheu, J. K.
• Yeh, T. W.
• Chi, G. C..

Report Date:

2000-07-01

Pagination or Media Count:

8.0

Abstract:

InGaNGaN double heterostructure DH and multiple quantum wellsMQW light-emitting diodes were grown by metalorganic vapor phase epitaxyMOVPE. Band gap narrowing of the PL spectra for the InGaNGaN MQW LEDs can be observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibit a blue-shift phenomenon when increasing the injection current and laser power, respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Stark effectPQCSE and a blue-shift mechanism of band-filling and charge screening effects.

Descriptors:

• *LUMINESCENCE
• *LIGHT EMITTING DIODES
• BLUE(COLOR)
• INDIUM
• GALLIUM NITRIDES

Subject Categories:

• Electrical and Electronic Equipment
• Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE