Accession Number:

ADP011299

Title:

Metal-Induced Laterally Crystallized Polycrystalline Silicon: Technology, Material and Devices

Descriptive Note:

Invited paper

Corporate Author:

HONG KONG UNIV OF SCIENCE AND TECHNOLOGY KOWLOON DEPT OF ELECTRICAL AND ELECTRONIC ENGINEERING

Personal Author(s):

Report Date:

2000-07-01

Pagination or Media Count:

15.0

Abstract:

Polycrystalline silicon poly-Si has been obtained by low-temperature 500 degrees C, nickel-based, metal-induced crystal lization MIC of amorphous silicon. Because crystallization outside of the nickel-covered regions is not only possible but also commonly utilized, the technique is more often called metal-induced lateral crystallization MILC. Based on studies on the crystallization kinetics and material characteristics, a unified mechanism is proposed for MIC both under and outside of the nickel coverage. Conduction in MILC poly-Si is found to be anisotropic with respect to the MILC direction. While the material quality of MILC poly-Si is significantly better than that of solid-phase crystallized poly-Si, the performance of MILC poly-Si thin-film transistors TFTs is quite sensitive to and degraded by the inclusion of MICMILC interfaces in the device channel regions. When such interfaces are eliminated, excellent TFTs are obtained that can be used to realize high performance systems-on-panels, including sophisticated displays based on liquid crystals or organic light-emitting diodes. The application of MILC poly-Si is not limited to low-temperature electronics, it is found that high-temperature re- crystallization results in MILC poly-Si with material quality approaching that of single-crystal Si. Re-crystallized MILC poly-Si has been used to realize high performance piezo-resistors and TFTs for integrated sensor applications.

Subject Categories:

  • Inorganic Chemistry
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE