A Novel CMOS Photosensor With a Gate-Body Tied NMOSFET Structure
SEOUL NATIONAL UNIV (REPUBLIC OF KOREA) SCHOOL OF ELECTRICAL ENGINEERING
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A novel CMOS photosensor with a gate-body tied NMOSFET structure realized in the triple well is presented. The photocurrent is amplified by the lateral and vertical BJT action, which results in two different output photocurrents, which can be used for different applications within a pixel. The lateral action results in the drain current with higher sensitivity at low light intensity. And the vertical action results in the collector current with uniform responsivity over wider range of the light intensity. The proposed photosensor is compatible with CMOS circuits.
- Electrical and Electronic Equipment
- Electricity and Magnetism