Accession Number:

ADP011025

Title:

Transport Properties of Bi-related Nanowire Systems

Descriptive Note:

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE

Report Date:

2001-01-01

Pagination or Media Count:

6.0

Abstract:

We present here an electrical transport property study of Te-doped Bi nanowires, and Bi1-xSbx alloy nanowires embedded in a dielectric matrix. The crystal structure of the nanowires were characterized by X-ray diffraction measurements, indicating that the nanowires possess the same lattice structure as bulk Bi in the presence of a small amount of Te or Sb atoms. The resistance measurements of 40-nm Te-doped Bi nanowires were performed over a wide range of temperature 2 K less than or equal T less than or equal 300 K, and the results are consistent with theoretical predictions. The 1D-to-3D localization transition and the boundary scattering effect are both observed in magneto-resistance measurements of Bi1-xSbx alloy nanowires at low temperatures T 4K.

Subject Categories:

  • Crystallography
  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE