Accession Number:

ADP011025

Title:

Transport Properties of Bi-related Nanowire Systems

Descriptive Note:

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE

Personal Author(s):

• Lin, Y. M.
• Cronin, S. B.
• Ying, J.Y.
• Heremans, J.
• Dresselhaus, M. S.

Report Date:

2001-01-01

Pagination or Media Count:

6.0

Abstract:

We present here an electrical transport property study of Te-doped Bi nanowires, and Bi1-xSbx alloy nanowires embedded in a dielectric matrix. The crystal structure of the nanowires were characterized by X-ray diffraction measurements, indicating that the nanowires possess the same lattice structure as bulk Bi in the presence of a small amount of Te or Sb atoms. The resistance measurements of 40-nm Te-doped Bi nanowires were performed over a wide range of temperature 2 K less than or equal T less than or equal 300 K, and the results are consistent with theoretical predictions. The 1D-to-3D localization transition and the boundary scattering effect are both observed in magneto-resistance measurements of Bi1-xSbx alloy nanowires at low temperatures T 4K.

Descriptors:

• *TRANSPORT PROPERTIES
• *LATTICE DYNAMICS
• *NANOSTRUCTURES
• TEMPERATURE
• MAGNETIC FIELDS
• ALLOYS
• ELECTRICAL PROPERTIES
• ANISOTROPY
• MATRICES(CIRCUITS)
• NANOTECHNOLOGY

Subject Categories:

• Crystallography
• Electricity and Magnetism
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE