Sulfide Treatment on III-V Compound Surfaces,
TSUKUBA UNIV IBARAKI (JAPAN) INST OF MATERIALS SCIENCE
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The treatment of GaAs with a sulfide solution was initiated by Sandroff and others in 1987. They used Na2S as the magic agent. After soaking the GaAs crystal. photoluminescencePL signal was drastically intensified and the current amplification factor in a bipolar transistor increased, meaning the suppression of carrier recombination velocity at the surface. However, it was soon known that the treatment effect was lost by rinsing the surface with water. They suggested the use of other sulfides, but we were the first to observe the more reliable effect of NH42S as well as its variation, NH42Sx.
- Solid State Physics