Study of Epitaxial Growth by UHV-SEM and RHEED-TRAXS,
TOKYO UNIV (JAPAN)
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RHEED-TRAXS method has high sensitivity for the surface elementary analysis. Applying this method we studied the surface composition during adsorption and epitaxial growth processes of InSbSi100 and GeSnGe111 systems. We have developed a new UHV-SEM which has a high resolution of about 5 A. We found that by using the UHV-SEM we can observe directly the domain contrasts from the two dimensional surface structures such as 7x 7, 5x 2Au,3x 3-Ag which are formed on Au,AgSi111 system.