Accession Number:

ADP007979

Title:

Study of Epitaxial Growth by UHV-SEM and RHEED-TRAXS,

Descriptive Note:

Corporate Author:

TOKYO UNIV (JAPAN)

Personal Author(s):

• Ino, Shozo

Report Date:

1992-07-01

Pagination or Media Count:

4.0

Abstract:

RHEED-TRAXS method has high sensitivity for the surface elementary analysis. Applying this method we studied the surface composition during adsorption and epitaxial growth processes of InSbSi100 and GeSnGe111 systems. We have developed a new UHV-SEM which has a high resolution of about 5 A. We found that by using the UHV-SEM we can observe directly the domain contrasts from the two dimensional surface structures such as 7x 7, 5x 2Au,3x 3-Ag which are formed on Au,AgSi111 system.

Descriptors:

• *ELECTRON DIFFRACTION
• *X RAY SPECTROSCOPY
• *CRYSTAL STRUCTURE
• ADSORPTION
• EPITAXIAL GROWTH
• HIGH RESOLUTION
• HIGH SENSITIVITY
• RESOLUTION
• SENSITIVITY
• STRUCTURES
• SURFACES
• TWO DIMENSIONAL
• JAPAN
• INDIUM ANTIMONIDES

Subject Categories:

• Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE