Application of Migration-Enhanced Epitaxy to Novel Semiconductor Structures,
NIPPON TELEGRAPH AND TELEPHONE CORP TOKYO
Pagination or Media Count:
Enhanced surface migration is essential to the growth of high quality epitaxial layers. In the growth of III-V compound semiconductors, surface migration is effectively enhanced by supplying group Ill atoms to the growing surface in the absence of group V atoms or molecules. In this situation, the lifetime of isolated group Ill atoms, which are quite mobile on the growing surface, is greatly increased resulting in these atoms migrating a large distance during growth. Migration-enhanced epitaxy MEE is based on this characteristic. MEE has proved useful for growing flat heterojunctions and for lowering the epitaxial growth temperature of III-V compound semiconductors. This paper describes the principle of MEE and its application to the growth of novel semiconductor structures such as GaAsAlAs horizontal superlattices, ZnSeGaAs superlattices, and GaAsl-xSi2x,GaAs superlattices.
- Solid State Physics