Accession Number:

ADP007972

Title:

Application of Migration-Enhanced Epitaxy to Novel Semiconductor Structures,

Descriptive Note:

Corporate Author:

NIPPON TELEGRAPH AND TELEPHONE CORP TOKYO

Personal Author(s):

• Horikoshi, Y.
• Yamaguchi, H.
• Rao, T. S.
• Ramesh, S.
• Kobayashi, N.

Report Date:

1992-07-01

Pagination or Media Count:

4.0

Abstract:

Enhanced surface migration is essential to the growth of high quality epitaxial layers. In the growth of III-V compound semiconductors, surface migration is effectively enhanced by supplying group Ill atoms to the growing surface in the absence of group V atoms or molecules. In this situation, the lifetime of isolated group Ill atoms, which are quite mobile on the growing surface, is greatly increased resulting in these atoms migrating a large distance during growth. Migration-enhanced epitaxy MEE is based on this characteristic. MEE has proved useful for growing flat heterojunctions and for lowering the epitaxial growth temperature of III-V compound semiconductors. This paper describes the principle of MEE and its application to the growth of novel semiconductor structures such as GaAsAlAs horizontal superlattices, ZnSeGaAs superlattices, and GaAsl-xSi2x,GaAs superlattices.

Descriptors:

• *SEMICONDUCTOR DEVICES
• *HETEROJUNCTIONS
• ATOMS
• EPITAXIAL GROWTH
• HETEROJUNCTIONS
• LAYERS
• MIGRATION
• MOBILE
• MOLECULES
• PAPER
• QUALITY
• SEMICONDUCTORS
• STRUCTURES
• SUPERLATTICES
• SURFACES
• TEMPERATURE
• JAPAN
• GALLIUM ARSENIDES
• ZINC SELENIDES
• ALUMINUM ARSENIDES

Subject Categories:

• Crystallography
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE