Accession Number:

ADP007970

Title:

Selective Growth of InP/GaInAs Heterostructures Using Metalorganic Molecular Beam Epitaxy,

Descriptive Note:

Corporate Author:

AT AND T BELL LABS MURRAY HILL NJ

Personal Author(s):

• Wang, Y. L.
• Feygenson, A.
• Hamm, R. A.
• Ritter, D.
• Weiner, J. S.

Report Date:

1992-07-01

Pagination or Media Count:

4.0

Abstract:

Selective area growth is used in the fabrication of Si epitaxial devices such as bipolar transistors. This growth technique facilitates the preparation of very complex self-aligned and buried transistor structures. Selective growth has been investigated in the III-V materials, without, however, any significant results pertaining to the optical or electrical quality of the material grown, or device results. In this work, we investigate selective growth of InP and GaInAs on S02-masked InP substrates using metalorganic molecular beam epitaxy MOMBE. Group Ill and V elements are derived from triethylgallium and trimethylindium, and AsH3 and PH3 respectively. Excellent selectivity is achieved in the temperature range from 5 10 to 540 deg C.

Descriptors:

• *BIPOLAR TRANSISTORS
• *EPITAXIAL GROWTH
• FABRICATION
• MATERIALS
• MOLECULAR BEAMS
• PREPARATION
• QUALITY
• STRUCTURES
• SUBSTRATES
• TEMPERATURE
• INDIUM PHOSPHIDES
• GALLIUM ARSENIDES

Subject Categories:

• Crystallography
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE