Accession Number:

ADP007969

Title:

Selective Epitaxial Growth of AlGaAs by MOCVD Using Dialkylmetalchloride,

Descriptive Note:

Corporate Author:

UNIVERSITY OF ELECTRO-COMMUNICATIONS TOKYO (JAPAN)

Personal Author(s):

• Yamaguchi, Ko-ichi
• Okamoto, Kotaro

Report Date:

1992-07-01

Pagination or Media Count:

4.0

Abstract:

Selective epitaxial growth by metalorganic chemical vapor deposition MOCVD is expected to be one of the important technologies to fabricate microstructures of semiconductor devices. Recently, selective epitaxial growth has been applied to fabricate quantum well wires. In the fabrication of such a fine structure, good selectivity of deposition and excellent controllability of the ultrafine structure of epilayers is required. Many studies concerning to the selective epitaxial growth of III-V compound semiconductors by MOCVD have been reported. We investigated the selective epitaxial growth of GaAs and AlGaAs by atmospheric pressure AP-MOCVD using TMGA and TMAI.

Descriptors:

• *EPITAXIAL GROWTH
• *SEMICONDUCTOR DEVICES
• *ALUMINUM GALLIUM ARSENIDES
• BAROMETRIC PRESSURE
• FABRICATION
• SEMICONDUCTORS
• STRUCTURES
• VAPOR DEPOSITION
• VAPORS
• JAPAN

Subject Categories:

• Crystallography
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE