Doping Distributions in III-V Semiconductors,
AT AND T BELL LABS MURRAY HILL NJ
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Doping distributions with spatially abrupt boundaries and high concentrations become increasingly important for compound semiconductor devices. A good understanding of the limitations of profiling techniques is required for such doping distributions. Two profiling techniques, capacitance-voltage C-V profiling and secondary ion mass spectrometry SIMS, are used to study ultra-thin doping profiles and the limitations of the characterization techniques are analyzed.
- Solid State Physics