Accession Number:

ADP007967

Title:

Doping Distributions in III-V Semiconductors,

Descriptive Note:

Corporate Author:

AT AND T BELL LABS MURRAY HILL NJ

Personal Author(s):

Report Date:

1992-07-01

Pagination or Media Count:

8.0

Abstract:

Doping distributions with spatially abrupt boundaries and high concentrations become increasingly important for compound semiconductor devices. A good understanding of the limitations of profiling techniques is required for such doping distributions. Two profiling techniques, capacitance-voltage C-V profiling and secondary ion mass spectrometry SIMS, are used to study ultra-thin doping profiles and the limitations of the characterization techniques are analyzed.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE