Accession Number:

ADP007966

Title:

Chemical Beam Epitaxy for Opto-electronics and Electronics Applications,

Descriptive Note:

Corporate Author:

AT AND T BELL LABS MURRAY HILL NJ

Personal Author(s):

• Tsang, W. T.

Report Date:

1992-07-01

Pagination or Media Count:

3.0

Abstract:

Within the past few years, the progress in Chemical Beam Epitaxy CBE has been tremendous. It has attracted a great deal of interest from the MOCVD and MBE communities because it offers solutions to some of the most difficult problems encountered with each technique. The results thus far clearly demonstrated that high quality InGaAsInP materials and heterostructures can be routinely prepared by CBE. With new metalorganic aluminum compounds such as triisobutylalumium TIBAI, trimethylamine alane TMN A1H3, and others, high quality AlGaAs with low residual carbon background has successfully been prepared. Both AlGaAsGaAs and InGaAsPInP electronic and photonic devices with the best state-of-the-art performance have been prepared. With the use of reflection high energy electron diffraction RHEED, modulated beam mass spectrometry MBMS and other vacuum diagnostic techniques, very useful information has been obtained in understanding the metalorganic reaction chemistries on substrate surfaces. Such understandings are not only important for CBE, but also for MOCVD.

Descriptors:

• *ALUMINUM
• *INDIUM PHOSPHIDES
• *GALLIUM ARSENIDES
• *EPITAXIAL GROWTH
• ALUMINUM COMPOUNDS
• BACKGROUND
• CARBON
• CHEMICALS
• ELECTRON DIFFRACTION
• ELECTRONICS
• HIGH ENERGY
• MASS SPECTROMETRY
• MATERIALS
• PHOTONICS
• QUALITY
• REFLECTION
• RESIDUALS
• STATE OF THE ART
• SUBSTRATES
• SURFACES
• VACUUM
• ALUMINUM GALLIUM ARSENIDES
• ORGANOMETALLIC COMPOUNDS

Subject Categories:

• Crystallography
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE