Fast In-Situ Metallization: A Comparison of Several Methods with Possible Applications in High Density Multichip Interconnects,
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (SWITZERLAND)
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Some recent results obtained using three quite different experimental approaches to fast in-situ surface metallization are presented. One of the goals is to make high density interconnects for multichip modules with metal contact width, height and pitch respectively of the order of 10, 5 and 25 um. Direct writing speeds should be in excess of 1 cms. The first approach tried is to push classical pyrolytic laser chemical vapor deposition of copper from its bis-hexafluoroacetylacetonate Cuhfa2 to its limits. This is done by increasing the Cuhfa2 vapor pressure and by seeding the transparent surface of our substrate with a thin layer of a strongly light-absorbing substance. Speeds in the order of a few mms have already been obtained with good electrical properties and adhesion.
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