Accession Number:

ADP007916

Title:

Adsorption and Desorption Kinetics for Si(Csub 2 H sub 5)Sub 2 H sub 2 on Si(111) 7x7,

Descriptive Note:

Corporate Author:

STANFORD UNIV CA DEPT OF CHEMISTRY

Personal Author(s):

• Coon, P. A.
• Wise, M. L.
• George, S. M.

Report Date:

1992-05-22

Pagination or Media Count:

4.0

Abstract:

Diethylsilane DES, SiC2H52H2, is a promising candidate for the atomic layer epitaxy of silicon. Alkylsilanes are advantageous because they are less toxic and flammable than silanes. The reactions of organosilanes with silicon surfaces are also important both fundamentally and technologically. This study explored the adsorption and desorption kinetics for SiC2H52H2 on Si111 7x7 using laser induced thermal desorption LITD and temperature programmed desorption TPD technique.

Descriptors:

• *ADSORPTION
• *DESORPTION
• *SILANES
• *SURFACE CHEMISTRY
• *LASER PUMPING
• KINETICS
• LASERS
• LAYERS
• SILICON
• ALKYL RADICALS
• THERMAL PROPERTIES

Subject Categories:

• Physical Chemistry
• Radiation and Nuclear Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE