Adsorption and Desorption Kinetics for Si(Csub 2 H sub 5)Sub 2 H sub 2 on Si(111) 7x7,
STANFORD UNIV CA DEPT OF CHEMISTRY
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Diethylsilane DES, SiC2H52H2, is a promising candidate for the atomic layer epitaxy of silicon. Alkylsilanes are advantageous because they are less toxic and flammable than silanes. The reactions of organosilanes with silicon surfaces are also important both fundamentally and technologically. This study explored the adsorption and desorption kinetics for SiC2H52H2 on Si111 7x7 using laser induced thermal desorption LITD and temperature programmed desorption TPD technique.
- Physical Chemistry
- Radiation and Nuclear Chemistry