Accession Number:

ADP007915

Title:

State Specific of the Laser Induced Desorption of NO from Si 111,

Descriptive Note:

Corporate Author:

NATIONAL INST OF STANDARDS AND TECHNOLOGY GAITHERSBURG MD

Personal Author(s):

• Richter, L. J.
• Buntin, S. A.
• King, D. S.
• Cavanagh, R. R.

Report Date:

1992-05-22

Pagination or Media Count:

4.0

Abstract:

A wide variety of chemical processes at semiconductor surfaces have been observed to be promoted by radiation. The possible mechanisms for the transfer of the initial photon energy to the reaction coordinate are many, including simple substrate heating, substrate carrier driven reactions, and localized adsorbate photoexcitation. State-resolved studies of laser-induced reaction products have proven extremely illuminating as they often allow the distinction and quantification of various competing excitation mechanisms. We present the results of a state-resolved study of the laser-induced desorption LID of NO from Si111 in which the energy partitioning in the desorbed NO is found to vary dramatically with the initial NO coverage due to the presence of competing excitation channels.

Descriptors:

• *LASER PUMPING
• *NITROGEN OXIDES
• *SILICON
• ADSORBATES
• COORDINATES
• HEATING
• PHOTONS
• SEMICONDUCTORS
• SUBSTRATES
• ENERGY TRANSFER
• RADIATION PRESSURE
• SURFACE CHEMISTRY

Subject Categories:

• Physical Chemistry
• Radiation and Nuclear Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE