Accession Number:

ADP007889

Title:

Femtosecond Time-Resolved Studies of High-Field Parallel Transport in GaAs Quantum Wells,

Descriptive Note:

Corporate Author:

MICHIGAN UNIV ANN ARBOR ULTRAFAST SCIENCE LAB

Personal Author(s):

• Sha, W.
• Norris, T. B.
• Schaff, W. J.

Report Date:

1992-05-22

Pagination or Media Count:

4.0

Abstract:

Ballistic transport of electrons in semiconductors has recently been a topic of great interest. These studies are important because ballistic transport is expected to play a role in the operation of a number of state-of-the-art semiconductor devices. Ballistic drift in a field-free region of electrons launched across a heterojunction has been observed. In this paper we describe experiments that apply optical spectroscopy to time-resolve the distribution functions of electrons in the presence of a strong electric field applied in the plane of a MQW structure. The carriers are injected with zero initial kinetic energy by a short laser pulse. The exciton field-ionization, electron quasi-ballistic acceleration, field-induced heating, and real-space transfer of electrons into the barrier region of the MQW are observed by monitoring the carrier distribution function using femtosecond-pump continuum-probe techniques.

Descriptors:

• *HETEROJUNCTIONS
• *SEMICONDUCTOR DEVICES
• *TRANSPORT PROPERTIES
• ACCELERATION
• BALLISTICS
• BARRIERS
• DISTRIBUTION FUNCTIONS
• DRIFT
• ELECTRIC FIELDS
• ELECTRONS
• EXCITONS
• HEATING
• IONIZATION
• KINETIC ENERGY
• LASERS
• MONITORING
• OPERATION
• PROBES
• PULSES
• RECREATION
• REGIONS
• SEMICONDUCTORS
• SPECTROSCOPY
• STATE OF THE ART
• GALLIUM ARSENIDES
• PUMPING(ELECTRONICS)

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE