Application of Minibands to InAlAs/InGaAs Superlattice Avalanche Photodiodes,
HITACHI LTD TOKYO (JAPAN) CENTRAL RESEARCH LAB
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An InAlAsInGaAs superlattice Avalanche Photodiode SL-APD is of great interest for 10-Gbs lightwave transmission, because it is expected to operate with a high gain-bandwidth product and a low multiplication noise 1. Recently, using the SL-APD, the receiver sensitivity of -24 dBm at 10 Gbs was achieved 2. This is higher than that obtained using the conventional InPInGaAs APDs. For the improvement of the 10-Gbs receiver sensitivity, the SL structure must be optimized, because the characteristics of SL-APDs depend on it. From this point of view, we proposed a novel SL-APD structure with thin-width wells 3, however the effect of thin wells on high speed operation has not been sufficiently considered. This paper proposes an application of minibands to hetero-interfaces of a SL-APD to make wells thinner for high-speed and low-noise operation. High-speed electron transport through minibands is also discussed and demonstrated in a PIN-photodiode PD with minibands.
- Electrooptical and Optoelectronic Devices
- Electricity and Magnetism