Accession Number:

ADP007875

Title:

Application of Minibands to InAlAs/InGaAs Superlattice Avalanche Photodiodes,

Descriptive Note:

Corporate Author:

HITACHI LTD TOKYO (JAPAN) CENTRAL RESEARCH LAB

Personal Author(s):

• Hanatani, S.
• Nakamura, H.
• Tanaka, S.
• Notsu, C.
• Ishida, K.

Report Date:

1992-05-22

Pagination or Media Count:

4.0

Abstract:

An InAlAsInGaAs superlattice Avalanche Photodiode SL-APD is of great interest for 10-Gbs lightwave transmission, because it is expected to operate with a high gain-bandwidth product and a low multiplication noise 1. Recently, using the SL-APD, the receiver sensitivity of -24 dBm at 10 Gbs was achieved 2. This is higher than that obtained using the conventional InPInGaAs APDs. For the improvement of the 10-Gbs receiver sensitivity, the SL structure must be optimized, because the characteristics of SL-APDs depend on it. From this point of view, we proposed a novel SL-APD structure with thin-width wells 3, however the effect of thin wells on high speed operation has not been sufficiently considered. This paper proposes an application of minibands to hetero-interfaces of a SL-APD to make wells thinner for high-speed and low-noise operation. High-speed electron transport through minibands is also discussed and demonstrated in a PIN-photodiode PD with minibands.

Descriptors:

• *PHOTODIODES
• *SUPERLATTICES
• *AVALANCHE DIODES
• BANDWIDTH
• ELECTRON TRANSPORT
• HIGH GAIN
• INTERFACES
• LOW NOISE
• MULTIPLICATION
• NOISE
• OPERATION
• RECEIVERS
• SENSITIVITY
• STRUCTURES
• VELOCITY
• WIDTH
• ALUMINUM ARSENIDES
• GALLIUM ARSENIDES
• INDIUM PHOSPHIDES
• PIN DIODES
• JAPAN

Subject Categories:

• Electrooptical and Optoelectronic Devices
• Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE