Accession Number:

ADP007874

Title:

Nonlinear Device for Optical Image Processing Based on Semi-Insulating CdZnTe/ZnTe Multiple Quantum Wells,

Descriptive Note:

Corporate Author:

AT AND T BELL LABS MURRAY HILL NJ

Personal Author(s):

• Partovi, Afshin
• Glass, Alastair M.
• Olson, Don H.
• Zydzik, George J.
• Feldman, Robert D.

Report Date:

1992-05-22

Pagination or Media Count:

3.0

Abstract:

For optical information processing applications, devices with high contrast ratio, speed, resolution and sensitivity are desirable. Devices based on charge transport nonlinearities can provide these requirements at low intensities. In particular, the SEED device takes advantage of the large excitonic nonlinearities in multiple quantum wells MQWs together with charge transport processes to achieve large electro-optic effects at small interaction lengths. Another example of charge transport nonlinear devices is the Pockels Readout Optical Modulator PROM which consists of a semi-insulating electro-optic material placed between two dielectric layers and transparent electrodes. The electro-optic material serves as both a photoconductor and the nonlinear medium. We report on a device based on the PROM concept using ion-implanted semi-insulating 11-VI MQWs as the nonlinear medium. Ion implantation of MQWs provides diffraction limited resolution without need for pixellation of the device. Very large and sensitive nonlinearities can be achieved in this device.

Descriptors:

• *PHOTOCONDUCTORS
• *OPTICAL DETECTORS
• *IMAGE PROCESSING
• CONTRAST
• DIELECTRICS
• DIFFRACTION
• ELECTRODES
• INFORMATION PROCESSING
• INTENSITY
• INTERACTIONS
• ION IMPLANTATION
• LAYERS
• OPTICS
• RATIOS
• RESOLUTION
• SENSITIVITY
• TRANSPORT
• CADMIUM TELLURIDES
• ZINC TELLURIDES
• LIGHT MODULATORS
• POCKELS CELLS

Subject Categories:

• Optical Detection and Detectors
• Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE