Structure Dependence of Carrier Replenishment in Multiple Quantum Well Optical Amplifiers,
AT AND T BELL LABS HOLMDEL NJ
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In forward biased quantum well structures, such as lasers and optical amplifiers, electrons and holes must flow through the barrier regions before they are captured by the quantum wells. This capture process, which concerns the scattering of a three-dimensional barrier state into a two-dimensional state in the quantum well, is of fundamental interest. It is also significant for devices, because it relates to the efficiency and modulation performance of quantum well lasers, as well as to the gain recovery time and, hence, gain saturation characteristics of quantum well optical amplifiers.
- Electrooptical and Optoelectronic Devices
- Lasers and Masers