Accession Number:

ADP007861

Title:

A High contrast, Low Insertion Loss Asymmetric Fabry Perot Modulator Operating at 4.1 Volts,

Descriptive Note:

Corporate Author:

UNIVERSITY COLL LONDON (UNITED KINGDOM) DEPT OF ELECTRONIC AND ELECTRICAL ENG INEERING

Personal Author(s):

• Zouganeli, P.
• Whitehead, M.
• Stevens, P.J.
• Rivers, A.
• Parry, G.

Report Date:

1992-05-22

Pagination or Media Count:

4.0

Abstract:

A very high contrast 2OdB, low insertion loss 3.3dB GaAsAlGaAs multiple quantum well MQW reflection modulator with an operating voltage of -9V reverse bias has recently been demonstrated. The device was electrically a p-i-n diode with the MQW in the intrinsic region, and optically an asymmetric Fabry-Perot FP cavity. The back mirror of the FP cavity was formed using an integrated quarter wave reflector stack and exhibited a reflectivity of 95. The front mirror was the natural air-semiconductor interface with a reflectivity of -30. A reduction of the operating voltage, aiming at a high contrast, low insertion loss modulator is addressed in this paper.

Descriptors:

• *LIGHT MODULATORS
• AIMING
• AIR
• BIAS
• CAVITIES
• CONTRAST
• INSERTION LOSS
• INTERFACES
• MIRRORS
• REDUCTION
• REFLECTION
• REFLECTIVITY
• REFLECTORS
• SEMICONDUCTORS
• VOLTAGE
• FABRY PEROT INTERFEROMETERS
• SEMICONDUCTOR DIODES
• GALLIUM ARSENIDES
• ALUMINUM GALLIUM ARSENIDES
• GREAT BRITAIN

Subject Categories:

• Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE