A High contrast, Low Insertion Loss Asymmetric Fabry Perot Modulator Operating at 4.1 Volts,
UNIVERSITY COLL LONDON (UNITED KINGDOM) DEPT OF ELECTRONIC AND ELECTRICAL ENG INEERING
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A very high contrast 2OdB, low insertion loss 3.3dB GaAsAlGaAs multiple quantum well MQW reflection modulator with an operating voltage of -9V reverse bias has recently been demonstrated. The device was electrically a p-i-n diode with the MQW in the intrinsic region, and optically an asymmetric Fabry-Perot FP cavity. The back mirror of the FP cavity was formed using an integrated quarter wave reflector stack and exhibited a reflectivity of 95. The front mirror was the natural air-semiconductor interface with a reflectivity of -30. A reduction of the operating voltage, aiming at a high contrast, low insertion loss modulator is addressed in this paper.
- Electrooptical and Optoelectronic Devices