Accession Number:

ADP007831

Title:

Low Driving Voltage and Low Chirp InGaAs/InAlAs MQW Electro-Absorption Modulator,

Descriptive Note:

Corporate Author:

HITACHI LTD TOKYO (JAPAN) CENTRAL RESEARCH LAB

Personal Author(s):

• Sano, Hirohisa
• Inoue, Hiroaki
• Tanaka, Shigehisa
• Hanatani, Shoichi
• Ishida, Koji

Report Date:

1992-05-22

Pagination or Media Count:

4.0

Abstract:

With the progress of the ultra high-bit rate optical transmission system, there has been much interest in the InGaAsInAlAs MQW electro-absorption EA modulators because of their wide bandwidth and high modulation efficiency around 1.55um wavelength. However, the modulator should be not only high-speed and low-driving voltage but low loss and low chirp for the practical use. In this paper, we analyze the absorption layer thickness dependence of the modulation characteristics for the InGaAsInAlAs MQW EA modulators. From the analysis, the new device structure and experimental results of low driving voltage and low chirp MQW EA modulator for 10Gbs transmission are demonstrated.

Descriptors:

• *LIGHT MODULATORS
• *QUANTUM ELECTRONICS
• ABSORPTION
• BANDWIDTH
• LAYERS
• LOW LOSS
• MODULATION
• RATES
• STRUCTURES
• THICKNESS
• VELOCITY
• VOLTAGE
• GALLIUM ARSENIDES
• ALUMINUM ARSENIDES
• INDIUM COMPOUNDS
• DRIVES(ELECTRONICS)
• QUANTUM EFFICIENCY
• JAPAN

Subject Categories:

• Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE