Comparison of Oxygen Ion- and Proton-Implanted GaAs Photoconductive Switches,
MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING
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Oxygen ion and proton implanted GaAs photoconductive PC switches which can be used for on-wafer characterization of GaAs MMICs have been evaluated. The Oxygen switch performed better in terms of switch sensitivity and bandwidth. It has been used to measure the S-parameter of a 3 stage 12 GHz MMIIC amplifier. A good agreement between the PC sampling technique and the network analyzer was achieved up to a 40 db dynamic range.
- Electrooptical and Optoelectronic Devices