Accession Number:

ADP007678

Title:

Comparison of Oxygen Ion- and Proton-Implanted GaAs Photoconductive Switches,

Descriptive Note:

Corporate Author:

MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Hung, Sheng-lung L.
• Chauchard, Eve A.
• Lee, Chi H.
• Smith, Thane
• Lee, Timothy T.

Report Date:

1992-05-22

Pagination or Media Count:

5.0

Abstract:

Oxygen ion and proton implanted GaAs photoconductive PC switches which can be used for on-wafer characterization of GaAs MMICs have been evaluated. The Oxygen switch performed better in terms of switch sensitivity and bandwidth. It has been used to measure the S-parameter of a 3 stage 12 GHz MMIIC amplifier. A good agreement between the PC sampling technique and the network analyzer was achieved up to a 40 db dynamic range.

Descriptors:

• *PHOTOCONDUCTORS
• *OPTICAL SWITCHING
• *GALLIUM ARSENIDES
• AMPLIFIERS
• ANALYZERS
• BANDWIDTH
• DYNAMIC RANGE
• DYNAMICS
• IONS
• NETWORKS
• OXYGEN
• PARAMETERS
• PROTONS
• SAMPLING
• SENSITIVITY
• SWITCHES
• ELECTROOPTICS
• PHOTOCONDUCTIVITY
• SYMPOSIA

Subject Categories:

• Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE