Accession Number:

ADP007677

Title:

Transient Absorption of Low-Temperature Molecular-Beam Epitaxy Grown GaAs,

Descriptive Note:

Corporate Author:

MICHIGAN UNIV ANN ARBOR ULTRAFAST SCIENCE LAB

Personal Author(s):

• Norris, T. B.
• Sha, W.
• Schaff, W. J.
• Song, X. J.
• Lillental-Weber, Z.

Report Date:

1992-05-22

Pagination or Media Count:

4.0

Abstract:

We have applied time-resolved absorption spectroscopy to study the near-band-edge carrier dynamics of low temperature-MBE-grown GaAs, in order to directly observe the carrier relaxation and lifetime for this material.

Descriptors:

• *EPITAXIAL GROWTH
• *GALLIUM ARSENIDES
• *ELECTROOPTICS
• *PHOTODETECTORS
• ABSORPTION
• DYNAMICS
• MATERIALS
• SPECTROSCOPY
• TIME
• OPTICAL DETECTION
• FIELD EFFECT TRANSISTORS
• SYMPOSIA

Subject Categories:

• Electrooptical and Optoelectronic Devices
• Solid State Physics
• Optical Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE