Transient Absorption of Low-Temperature Molecular-Beam Epitaxy Grown GaAs,
MICHIGAN UNIV ANN ARBOR ULTRAFAST SCIENCE LAB
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We have applied time-resolved absorption spectroscopy to study the near-band-edge carrier dynamics of low temperature-MBE-grown GaAs, in order to directly observe the carrier relaxation and lifetime for this material.
- Electrooptical and Optoelectronic Devices
- Solid State Physics
- Optical Detection and Detectors