Accession Number:

ADP007676

Title:

Characterizations of Terahertz Optoelectronic Behavior of GaAs Epilayers Containing Arsenic Precipitates,

Descriptive Note:

Corporate Author:

IBM RESEARCH DIV SAN JOSE CA

Personal Author(s):

• Warren, A. C.
• Katzenellenbogen, N.
• Grischkowsky, D.
• Woodall, J. M.
• Melloch, M. R.

Report Date:

1992-05-22

Pagination or Media Count:

2.0

Abstract:

Using GaAs epilayers with arsenic precipitates GaAsAs as the photoconductive material in a broad-band optoelectronic teraHz beam system, we have generated and detected freely propagating, subpsec electromagnetic pulses. The As precipitates occur as a result of epi-growth at 250 C followed by a 600 C. anneal, yielding a high-quality, epitaxial matrix essentially free of point defects.

Descriptors:

• *ELECTROOPTICS
• *PHOTOCONDUCTORS
• *EPITAXIAL GROWTH
• ARSENIC
• ELECTROMAGNETIC PULSES
• MATERIALS
• POINT DEFECTS
• PRECIPITATES
• PULSES
• GALLIUM ARSENIDES
• PHOTOCONDUCTIVITY
• SYMPOSIA

Subject Categories:

• Electrooptical and Optoelectronic Devices
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE