Accession Number:

ADP007675

Title:

Strained-Layers for Electronics and Optoelectronics,

Descriptive Note:

Corporate Author:

SANDIA NATIONAL LABS ALBUQUERQUE NM

Personal Author(s):

• Myers, David R.

Report Date:

1992-05-22

Pagination or Media Count:

6.0

Abstract:

The strain associated with intentionally lattice mismatched strained-layer heteroepitaxy provides a novel method for tailoring material band structure to enhance device performance through optimization of material structure. The applications of strained-layer epitaxy to heterojunction transistors and semiconductor lasers are presented.

Descriptors:

• *SEMICONDUCTORS
• *JUNCTION TRANSISTORS
• *ELECTROOPTICS
• *SEMICONDUCTOR DEVICES
• HETEROJUNCTIONS
• LASERS
• LAYERS
• MATERIALS
• OPTIMIZATION
• SEMICONDUCTOR LASERS
• STRUCTURES
• TRANSISTORS
• EPITAXIAL GROWTH
• CRYSTAL LATTICES
• GALLIUM ARSENIDES
• ALUMINUM ALLOYS
• SYMPOSIA

Subject Categories:

• Electrooptical and Optoelectronic Devices
• Solid State Physics
• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE