Strained-Layers for Electronics and Optoelectronics,
SANDIA NATIONAL LABS ALBUQUERQUE NM
Pagination or Media Count:
The strain associated with intentionally lattice mismatched strained-layer heteroepitaxy provides a novel method for tailoring material band structure to enhance device performance through optimization of material structure. The applications of strained-layer epitaxy to heterojunction transistors and semiconductor lasers are presented.
- Electrooptical and Optoelectronic Devices
- Solid State Physics
- Electrical and Electronic Equipment