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Accession Number:
ADP007675
Title:
Strained-Layers for Electronics and Optoelectronics,
Descriptive Note:
Corporate Author:
SANDIA NATIONAL LABS ALBUQUERQUE NM
Report Date:
1992-05-22
Pagination or Media Count:
6.0
Abstract:
The strain associated with intentionally lattice mismatched strained-layer heteroepitaxy provides a novel method for tailoring material band structure to enhance device performance through optimization of material structure. The applications of strained-layer epitaxy to heterojunction transistors and semiconductor lasers are presented.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE