Accession Number:

ADP007675

Title:

Strained-Layers for Electronics and Optoelectronics,

Descriptive Note:

Corporate Author:

SANDIA NATIONAL LABS ALBUQUERQUE NM

Personal Author(s):

Report Date:

1992-05-22

Pagination or Media Count:

6.0

Abstract:

The strain associated with intentionally lattice mismatched strained-layer heteroepitaxy provides a novel method for tailoring material band structure to enhance device performance through optimization of material structure. The applications of strained-layer epitaxy to heterojunction transistors and semiconductor lasers are presented.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Solid State Physics
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE