Accession Number:

ADP007673

Title:

Competition Between Tunneling and Exciton Formation for Photoexcited Carriers in Asymmetric Double Wells,

Descriptive Note:

Corporate Author:

MAX-PLANCK-INST FUER FESTKOERPERFORS- CHUNG STUTTGART (GERMANY F R)

Personal Author(s):

• Kuhl, J.
• Strobel, R.
• Eccleston, R.
• Koehler, K.

Report Date:

1992-05-22

Pagination or Media Count:

6.0

Abstract:

The formation of excitons from photoexcited free carriers in a GaAs asymmetric double quantum well tunneling structure is shown to occur by a bimolecular process. Using the non-linear luminescence cross-correlation technique, a bi-molecular formation coefficient of 6xlO-12cm2ps is determined. The electron and hole tunneling times are also simultaneously obtained.

Descriptors:

• *TUNNELING(ELECTRONICS)
• *OPTICAL WAVEGUIDES
• COEFFICIENTS
• CORRELATION TECHNIQUES
• CROSS CORRELATION
• ELECTRONS
• EXCITONS
• LUMINESCENCE
• STRUCTURES
• GALLIUM ARSENIDES
• ELECTROOPTICS
• PHOTOLUMINESCENCE
• ELECTRIC FIELDS
• SYMPOSIA

Subject Categories:

• Electrooptical and Optoelectronic Devices
• Fiber Optics and Integrated Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE