Competition Between Tunneling and Exciton Formation for Photoexcited Carriers in Asymmetric Double Wells,
MAX-PLANCK-INST FUER FESTKOERPERFORS- CHUNG STUTTGART (GERMANY F R)
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The formation of excitons from photoexcited free carriers in a GaAs asymmetric double quantum well tunneling structure is shown to occur by a bimolecular process. Using the non-linear luminescence cross-correlation technique, a bi-molecular formation coefficient of 6xlO-12cm2ps is determined. The electron and hole tunneling times are also simultaneously obtained.
- Electrooptical and Optoelectronic Devices
- Fiber Optics and Integrated Optics