Accession Number:

ADP007666

Title:

Numerical Simulations of an Actively Q-Switched Semiconductor Laser,

Descriptive Note:

Corporate Author:

CHALMERS UNIV OF TECHNOLOGY GOETEBORG (SWEDEN)

Personal Author(s):

• Jonsson, Bjoern
• Eng, Sverre T.

Report Date:

1992-05-22

Pagination or Media Count:

6.0

Abstract:

In this work, the travelling-wave rate-equations have been used to numerically simulate the performance of an actively Q-switched GaAsAlGaAs twin-electrode laser. For modulation frequencies from 1.0 to 3.0 GHz optical output pulses of 20 - 23 ps were obtained. The calculated results of this model have been compared with experimental results and good agreement was found. The computer model is versatile, easy to implement on a small PC-type computer, and it can, without any modifications, be used to simulate the dynamic behavior of a large variety of optoelectronic devices. Hence, we believe that the travelling-wave rate equations can be an important tool for simulating ultrafast pulse generation in optoelectronic devices.

Descriptors:

• *ELECTROOPTICS
• *SEMICONDUCTOR LASERS
• *Q SWITCHING
• COMPUTERS
• DYNAMICS
• ELECTRODES
• EQUATIONS
• LASERS
• MODELS
• MODULATION
• OUTPUT
• PULSES
• GALLIUM ARSENIDES
• ALUMINUM ALLOYS
• OPTICAL COMMUNICATIONS
• FIBER OPTICS
• MATHEMATICAL MODELS
• SYMPOSIA
• OPTICAL SWITCHING
• REFLECTIVITY

Subject Categories:

• Lasers and Masers
• Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE