Theoretical Model of the Photon Transport Transistor,
COLORADO UNIV AT BOULDER
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A theoretical model for the photon transport transistor P.T.T. is developed, based on a set of rate equations. With this model the small signal differential current gain Beta Beta dI sub cdI sub b is calculated and compared with measurement results. Our model confirms that the differential current gain is dominated at low carrier densities by the spontaneous emission. It then decreases once stimulated emission becomes dominant and finally collapses to a small value at the lasing threshold carrier density. We were able to quantify the non-radiative carrier recombination lifetime, which for our experimental results was found to be 300 ns, and the scattering loss in the waveguide, which amounts to 2.7cm for an assumed total waveguide loss of 5cm.
- Electrooptical and Optoelectronic Devices
- Electrical and Electronic Equipment