Accession Number:

ADP007648

Title:

Picosecond Metal-Semiconductor-Metal Photodetectors with Sub-100-Nm finger Spacing and Finger Width in GaAs,

Descriptive Note:

Corporate Author:

MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Liu, Yue
• Fischer, Paul B.
• Chou, Stephen Y.

Report Date:

1992-05-22

Pagination or Media Count:

4.0

Abstract:

We have fabricated metal-semiconductor-metal photodetectors with sub-100-nm finger spacing and finger width on MBE-grown GaAs, which are, to our knowledge, the smallest ever reported. DC measurement shows that they have low dark current and high sensitivity. Monte-Carlo simulations demonstrate that the response time of the photodetectors for a 30 nm finger spacing can be as short as 0.4 ps, and the cut-off frequency can be over 1 TH2.

Descriptors:

• *PHOTODETECTORS
• *ELECTROOPTICS
• FINGERS
• FREQUENCY
• HIGH SENSITIVITY
• MEASUREMENT
• METALS
• RESPONSE
• SEMICONDUCTORS
• SENSITIVITY
• SIMULATION
• TIME
• WIDTH
• GALLIUM ARSENIDES
• EPITAXIAL GROWTH
• OPTICAL COMMUNICATIONS
• SYMPOSIA

Subject Categories:

• Electrooptical and Optoelectronic Devices
• Optical Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE