Picosecond Metal-Semiconductor-Metal Photodetectors with Sub-100-Nm finger Spacing and Finger Width in GaAs,
MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING
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We have fabricated metal-semiconductor-metal photodetectors with sub-100-nm finger spacing and finger width on MBE-grown GaAs, which are, to our knowledge, the smallest ever reported. DC measurement shows that they have low dark current and high sensitivity. Monte-Carlo simulations demonstrate that the response time of the photodetectors for a 30 nm finger spacing can be as short as 0.4 ps, and the cut-off frequency can be over 1 TH2.
- Electrooptical and Optoelectronic Devices
- Optical Detection and Detectors