Accession Number:

ADP007647

Title:

Ultrafast Graded Double-Heterostructure p-i-n Photodiode,

Descriptive Note:

Corporate Author:

CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

• Crawford, D. L.
• Wey, Y. G.
• Giboney, K.
• Bowers, J. E.
• Rodwell, M. J.

Report Date:

1992-05-22

Pagination or Media Count:

5.0

Abstract:

A 5 micro x 5 micron double heterostructure InGaAsInP pin photodiode is reported with a measured response of 5 ps and a deconvolved device impulse response of 3.8 ps. The double heterostructure employed reduces carrier diffusion and the graded heterobarriers play a key role in optimizing the device response speed by minimizing charge storage and device series resistance.

Descriptors:

• *PHOTODIODES
• *OPTICAL COMMUNICATIONS
• *ELECTROOPTICS
• PINS
• RECREATION
• RESISTANCE
• RESPONSE
• STORAGE
• VELOCITY
• INDIUM
• INDIUM PHOSPHIDES
• GALLIUM ARSENIDES
• EPITAXIAL GROWTH
• PHOTODETECTORS
• SYMPOSIA

Subject Categories:

• Electrooptical and Optoelectronic Devices
• Optical Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE