Ultrafast Graded Double-Heterostructure p-i-n Photodiode,
CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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A 5 micro x 5 micron double heterostructure InGaAsInP pin photodiode is reported with a measured response of 5 ps and a deconvolved device impulse response of 3.8 ps. The double heterostructure employed reduces carrier diffusion and the graded heterobarriers play a key role in optimizing the device response speed by minimizing charge storage and device series resistance.
- Electrooptical and Optoelectronic Devices
- Optical Detection and Detectors