Accession Number:

ADP007594

Title:

Nonlinearity Enhancement in a Four Layer GaAs/GaAlAs Waveguide,

Descriptive Note:

Corporate Author:

SOUTH CHINA NORMAL UNIV GUANGZHOU

Personal Author(s):

• Chen, Shaomei
• Liao, Chagangjun
• Jin, Huaichen
• Huang, Zhaohong

Report Date:

1992-05-22

Pagination or Media Count:

4.0

Abstract:

The photorefractive effect in semiconductor materials is attractive for processing low intensity near-infrared optical signals which are important for optical communication and optical computing. Photoinduced large nonlinearity in GaAs materials has been extensively studied in bulk material. A few is with optical waveguide of GaAs materials though the signal amplification in GaAs waveguide via two wavemixing has been proposed.

Descriptors:

• *OPTICAL WAVEGUIDES
• *HETEROJUNCTIONS
• *OPTICAL CIRCUITS
• AMPLIFICATION
• BULK MATERIALS
• INTENSITY
• LOW INTENSITY
• MATERIALS
• OPTICAL COMMUNICATIONS
• PROCESSING
• SEMICONDUCTORS
• SIGNALS
• WAVEGUIDES
• SYMPOSIA
• CHINA
• GALLIUM ARSENIDES
• ALUMINUM GALLIUM ARSENIDES
• GRATINGS(SPECTRA)

Subject Categories:

• Optics
• Non-Radio Communications

Distribution Statement:

APPROVED FOR PUBLIC RELEASE