Accession Number:

ADP007581

Title:

Nonlinear Refraction and Absorption of an InGaAs Single Quantum Well in an InGaAsP Waveguide,

Descriptive Note:

Corporate Author:

HERIOT-WATT UNIV EDINBURGH (SCOTLAND) DEPT OF PHYSICS

Personal Author(s):

• Ehrlich, J. E.
• Goodwill, D. J.
• Neilson, D. T.
• Walker, A. C.
• Johnston, C. I.

Report Date:

1992-05-22

Pagination or Media Count:

4.0

Abstract:

Semiconductor quantum-well structures can provide enhanced nonlinear effects compared to those observed in bulk material. The largest irradiance-induced refractive changes occur at wavelengths nearly resonant with the band edge or exciton absorption. If such a nonlinearity is to be effectively exploited in a waveguide configuration, the absorption due to the active quantum-well layers must be diluted to ensure sufficient transmission. Although this produces, all else being equal, a proportional drop in the effective nonlinearity n sub 2, it does permit operation at, or near to, the optimum wavelength where the figure-of-merit n sub 2Alpha is maximized.

Descriptors:

• *OPTICAL WAVEGUIDES
• *REFRACTION
• *RADIATION ABSORPTION
• BULK MATERIALS
• CONFIGURATIONS
• DROPS
• EDGES
• EXCITONS
• FIGURE OF MERIT
• LAYERS
• MATERIALS
• OPERATION
• SEMICONDUCTORS
• STRUCTURES
• SYMPOSIA
• UNITED KINGDOM
• INDIUM PHOSPHIDES
• GALLIUM ARSENIDES

Subject Categories:

• Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE