Photonic Switching Device by Integration of Heterojunction Phototransistor and Laser Diode,
KYOTO UNIV (JAPAN)
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High gain and very sensitive photonic switching device is developed by integrating directly and vertically a hetero-junction phototransistor and a laser diode. The device switches on with a very low input power of -10nW and emits output power of -4mW under continuous wave condition. The minimum switching energy is estimated to be as low as 8OfJ.
- Electrooptical and Optoelectronic Devices