Accession Number:

ADP007410

Title:

Linked InGaAs/InP Multiple Quantum-Well Modulator Arrays for Neural Networks and Photonic Switching Applications,

Descriptive Note:

Corporate Author:

BRITISH TELECOM RESEARCH LABS IPSWICH (UNITED KINGDOM)

Personal Author(s):

• Rejman-Greene, M. A.
• Scott, E. G.
• Webb, R. P.
• Healey, P.

Report Date:

1992-05-22

Pagination or Media Count:

3.0

Abstract:

The fabrication of a 10xl10 array of line-addressed coupled quantum well modulators, operating at 1.41 micron, is described.

Descriptors:

• *LIGHT MODULATORS
• *OPTICAL SWITCHING
• *INDIUM PHOSPHIDES
• *COMPLEMENTARY METAL OXIDE SEMICONDUCTORS
• *NEURAL NETS
• *QUANTUM ELECTRONICS
• *GALLIUM ARSENIDES
• *INFRARED DETECTORS
• FABRICATION
• DATA RATE
• N TYPE SEMICONDUCTORS
• SUBSTRATES
• LOGIC CIRCUITS
• GENERATORS
• HOLOGRAPHY
• NEAR INFRARED RADIATION
• ADDRESSING
• LINEAR ARRAYS
• FOREIGN TECHNOLOGY
• EPITAXIAL GROWTH
• UNITED KINGDOM
• COMPUTER APPLICATIONS
• MASKS
• ELECTRIC CURRENT
• WAFERS
• MOSAICS(DETECTORS)
• SYMPOSIA
• REPRINTS

Subject Categories:

• Electrooptical and Optoelectronic Devices
• Solid State Physics
• Optics
• Quantum Theory and Relativity
• Cybernetics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE