Accession Number:

ADP007228

Title:

Soft-X-Ray Reduction Lithography Using a Reflection Mask,

Descriptive Note:

Corporate Author:

NIPPON TELEGRAPH AND TELEPHONE CORP ATSUGI LSI LABS

Personal Author(s):

• Kinoshita, H.
• Kurihara, K.
• Mizota, T.
• Haga, T.
• Torii, Y.

Report Date:

1992-05-22

Pagination or Media Count:

5.0

Abstract:

A soft-x-ray reduction lithography using a multilayer reflection mask has been developed. To obtain a high throughput and a large exposure area, a reduction system consisting of two-mirror optics and a reflection mask with a scanning mechanism is adopted as a first generation system. A full 4-inch wafer reflection mask with high contract and an uniform quality throughout has been fabricated using a new process. MoB4C multilayer is used to shorten the exposure wavelength and to refine interfaces of multilayer and to obtain a fine pattern. And fine patterns less than 0.2 um at a demagnification of 18 have been obtained with a reflection mask and MoB4C multilayer optics in the area of 0.8 mm x0.15 mm.

Descriptors:

• *LITHOGRAPHY
• SOFT X RAYS
• REFLECTANCE
• MOLYBDENUM COMPOUNDS

Subject Categories:

• Printing and Graphic Arts

Distribution Statement:

APPROVED FOR PUBLIC RELEASE