High-power Operation of 1.48 Micron GalnAsp/GalnAsP Strained-layer Multiple Quantum Well Lasers,
SUMITOMO ELECTRIC INDUSTRIES LTD YOKOHAMA (JAPAN)
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High-power semiconductor lasers emitting at 1.48um wavelength have been increasingly important as pumping light sources for Er3-doped fiber amplifiers 1, 2. In this paper we report high power operation of 1.48 um GaInAsPGaInAsP multiple quantum well MQW lasers which utilize strained-layer MQW structures as active layers.
- Electrical and Electronic Equipment
- Fiber Optics and Integrated Optics