Accession Number:

ADP006979

Title:

High-power Operation of 1.48 Micron GalnAsp/GalnAsP Strained-layer Multiple Quantum Well Lasers,

Descriptive Note:

Corporate Author:

SUMITOMO ELECTRIC INDUSTRIES LTD YOKOHAMA (JAPAN)

Report Date:

1992-05-22

Pagination or Media Count:

4.0

Abstract:

High-power semiconductor lasers emitting at 1.48um wavelength have been increasingly important as pumping light sources for Er3-doped fiber amplifiers 1, 2. In this paper we report high power operation of 1.48 um GaInAsPGaInAsP multiple quantum well MQW lasers which utilize strained-layer MQW structures as active layers.

Subject Categories:

  • Electrical and Electronic Equipment
  • Fiber Optics and Integrated Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE