Temperature Dependence of the Two Beam Coupling Gain Coefficient of Photorefractive GaP,
TOKYO UNIV (JAPAN) INST OF INDUSTRIAL SCIENCE
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Undoped semi-insulating gallium phosphide is photorefractive material which is sensitive to the laser light of the wavelength between 0.6 um and 0.9 um1. He-Ne lasers and GaA1As laser diodes belong to this spectral region. This material is important for constructing compact systems with laser diodes. Since semi-insulating GaP has no significant application in electronics yet, enough data are not available. In this paper, we describe the measurement of the two beam coupling gain coefficient and the time constant at various temperature. The decrease of the gain coefficient is observed both at high and low temperature. We also observed the photochromic effect that is, intensity dependent absorption at low temperature.
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