Accession Number:

ADP006711

Title:

High Sensitivity Resonant Photorefractive Effect in Semi-Insulating CdZnTe/ZnTe Multiple Quantum Wells,

Descriptive Note:

Corporate Author:

AT AND T BELL LABS MURRAY HILL NJ

Report Date:

1992-05-22

Pagination or Media Count:

4.0

Abstract:

Although the photorefractive sensitivity of the semiconductors is many orders of magnitude larger than the oxides, their small Pockels electro-optic coefficient has-been a serious drawback. By taking advantage of the quadratic effects near the band-edge, nonlinearity and sensitivity of semiconductor photorefractives can be dramatically improved. Recently, two-beam-coupling gain coefficients of 16.3cm in gallium arsenides and 26.0cm in indium phosphides have been reported near the band-edge. Quantum confinement of excitons in multiple quantum wells MQWs provides an additional enhancement of the resonant electro-optic nonlinearities. We have recently demonstrated how enhanced photorefractive sensitivity can be obtained in semi-insulting MQW devices. These devices were made semi-insulting through ion-implantation to provide sufficient density of traps for the photorefractive process as well as relieving the need for any pixelation.

Subject Categories:

  • Optics
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE