Accession Number:

ADP006694

Title:

UHV Processing of Ferroelectric Barium Magnesium Fluoride Films and Devices,

Descriptive Note:

Corporate Author:

WESTINGHOUSE SCIENCE AND TECHNOLOGY CENTER PITTSBURGH PA

Report Date:

1991-04-05

Pagination or Media Count:

910.0

Abstract:

Barium magnesium fluoride BaMgF4 has recently emerged as a strong candidate for application as the gate dielectric in ferroelectric random access memory FERRAM devices with nondestructive readout NDRO. In earlier papers we reported the successful growth of oriented BaMgF4 films on Si100 and other substrates in a ultrahigh vacuum UHV system, as well as the results of the structural and electrical characterization of these ferroelectric films. In the present paper, we review some of the earlier results, and also examine the effect of variations in the growth temperature and various post-growth anneals on the stoichiometry, crystallinity, orientation, and electrical characteristics of the BaMgF 4 films. Initial attempts at integrating the ferroelectric field-effect transistor FEMFET with the standard CMOS VLSIC processing, as well as the effect of adding a thin capping layer of SiO 2 on the BaMgF 4 will also be described.

Subject Categories:

  • Electrical and Electronic Equipment
  • Computer Hardware
  • Ceramics, Refractories and Glass

Distribution Statement:

APPROVED FOR PUBLIC RELEASE