Accession Number:

ADP006688

Title:

Bottom Electrodes for Integrated Pb(Zr,Ti)03 Films,

Descriptive Note:

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

1991-04-05

Pagination or Media Count:

15.0

Abstract:

Lower electrodes for PbZr,Ti03 PZT used in ferroelectric random access memories must have good electrical conductivity and must interact as little as possible with the PZT film We have evaluated a number of bottom electrodes for use with PZT films deposited by ion beam sputter deposition These electrodes include Pt, PITi, RuO2, ReO3, and CoSi2Si3N4, all on SiO2Si and TiN and Pt on MgO. Films were studied by XTEM, Auger depth profiling, X-ray microanalysis, and XRD. Important issues for platinum include a microstructure porous for magnetron sputtered Pt b rapid lead diffusion through porous Pt c adhesion improved by raising deposition temperature or by adding a titanium layer and d hillock formation related to compressive stress in platinum. RuO2 has good conductivity and has no apparent interfacial layer with PZT. Each of the remaining substrates has drawbacks CoSi2 forms a surface oxide ReO3 has poor phase stability TiN oxidizes and loses conductivity.

Subject Categories:

  • Industrial Chemistry and Chemical Processing
  • Ceramics, Refractories and Glass
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE