Accession Number:

ADP006687

Title:

PbTi03 Thin Films Grown by Organometallic Chemical Vapour Deposition,

Descriptive Note:

Corporate Author:

PHILIPS RESEARCH LABS EINDHOVEN (NETHERLANDS)

Report Date:

1991-04-05

Pagination or Media Count:

14.0

Abstract:

We have used organometallic chemical vapour deposition OMCVD to deposit ferroelectric PbTiO3 films on both single crystalline 001SrTiO3 and oxidized Si substrates provided with a platinum electrode, using the precursors titanium-iso-propoxide and tetra-ethyl lead. Epitaxial PbTiO3 layers were grown on 001SrTiO3 at temperatures around 700 V. The epitaxial nature of the c-axis oriented PbTiO3 is confirmed by Rutherford backscattering spectrometry including channeling, x-ray diffraction XRD and high-resolution electron microscopy. A minimum channeling backscatter yield of - 3 is obtained under optimal conditions. Polycrystalline PbTiO3 films have been deposited on the platinized Si substrates at temperatures between 400 deg C and 550 deg C. XRD shows that the films are of a single-phase perovskite-type structure. For a layer deposited at 400 deg C followed by an anneal at 700 deg C we measured an E, of - 100 kvcm, an P, of - 55 ACcm, and a switching time 50 ns. This latter value was limited by the instrumental set-up.

Subject Categories:

  • Industrial Chemistry and Chemical Processing
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE