Accession Number:

ADP006678

Title:

Ferroelectrics for Silicon VLSI,

Descriptive Note:

Corporate Author:

DAVID SARNOFF RESEARCH CENTER PRINCETON NJ

Personal Author(s):

Report Date:

1991-04-05

Pagination or Media Count:

17.0

Abstract:

The application of ferroelectrics to EEPROM, non-volatile SRAMs, and sub-0.5 micron channel length MOS field effect transistors for silicon VLSI can significantly simplify device fabrication process, increase circuit density, and enhance device performance.

Subject Categories:

  • Computer Hardware
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE