Accession Number:

ADP006676

Title:

Ferroelectric Pb(Zr,Ti) 03 Thin Films Prepared by Planar Multi-Target Sputtering,

Descriptive Note:

Corporate Author:

SIEMENS A G MUNICH (GERMANY F R)

Report Date:

1991-04-05

Pagination or Media Count:

8.0

Abstract:

Lead zirconate titanate films are deposited using a planar multi-target sputtering system. This system consists of three metallic targets Zr,Pb,Ti and a rotating substrate holding pallet achieving a layer-by-layer growth of the material. Substrates used in this study were oxidised 100Si wafers with thin sputtered Pt layer. At substrate temperatures of about 450 deg C in situ i.e. without post-deposition annealing deposition of single phase perovskite PZT was obtained. Deposition rate is 3.5 nmmin. At substrate temperatures of more than 500 deg C the layers are poor in lead. ZrTiO4 was identified by x-ray diffraction. The dielectric constant and losses of the PZT films varied from 400-500 and from 0.008-0.015 respectively. The films. exhibited a hysteresis loop, remanent polarization measured was 7 ACcm2 and coercive field strength 7.5x106 Vm.

Subject Categories:

  • Ceramics, Refractories and Glass

Distribution Statement:

APPROVED FOR PUBLIC RELEASE