Accession Number:

ADP006673

Title:

A High-Capacitance PZT-on-Ta205 Memory Cell with a Chemically Stable Electrode Suitable for Sub-Micron Processing,

Descriptive Note:

Corporate Author:

ELECTRONICS RESEARCH LAB ADELAIDE (AUSTRALIA)

Report Date:

1991-04-05

Pagination or Media Count:

17.0

Abstract:

A high-capacitance PbZrx, Til-x03 PZT-on-Ta2O5 memory cell suitable for sub-micron processing is proposed, and an experimental capacitor of PZT ZrTi 5248-on-Ta2O5 with Ta electrode was prepared. The X-ray diffraction and XMA analysis of the sample showed that PZT reacted with neither Ta nor Ta2O5. The capacitor with 500 nm PZT thickness shows current density of 10-8 Acm2 at 4MVcm,-the breakdown field of 8MVcm, and the effective dielectric constant of 40.

Subject Categories:

  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE