Accession Number:

ADP006667

Title:

Characterization and Modelling of Thin-Film Ferroelectric Capacitors Using C-V Analysis

Descriptive Note:

Corporate Author:

CHARLES STARK DRAPER LAB INC CAMBRIDGE MA

Personal Author(s):

Report Date:

1991-04-05

Pagination or Media Count:

10.0

Abstract:

Advances have been made in the electronic characterization and analysis of thinfilm ferroelectric FE memory capacitors using capacitance vs. voltage C-V measurements. A mathematical model of the small-signal electrical behavior of the FE capacitor has been developed. This analysis shows that the small-signal characteristics of the FE capacitor are largely determined by the space charge concentrations at the ferroelectric to contact interface. These space charge regions have an adverse effect on the permittivity, coercivity and switching characteristics of the ferroelectric capacitor. These results will contribute to improving ferroelectric processing, appraising the quality of ferroelectric devices, and developing device models of the ferroelectric memory capacitors for use in circuit design.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE