Accession Number:

ADP006649

Title:

Statistical Theory of Fatigue in Ferroelectric Devices,

Descriptive Note:

Corporate Author:

COLORADO UNIV AT COLORADO SPRINGS

Report Date:

1991-04-05

Pagination or Media Count:

18.0

Abstract:

A simple model of fatigue in ferroelectric thin-films is developed from first principles. The core of the model is the distribution of pinning and coercive energies due to the polycrystalline nature of the material. Also, because domain nucleation for thin-films seem to be surface dominant, and surface space-charges are usually present, the model assumes that the pinning energies are field activated due to surface screening effects. The model is based on the well known two-state cluster theory in statistical physics. Further results from the model include the log t dependence of fatigue as a direct consequence of a gaussian distribution of pinning energies. And, for the first time a theoretical description of the V-1 dependence of fatigue is also described. The model is tested using fatigue data of sol-gel derived integrated Si PZT capacitors.

Subject Categories:

  • Electricity and Magnetism
  • Mechanics
  • Ceramics, Refractories and Glass

Distribution Statement:

APPROVED FOR PUBLIC RELEASE