Accession Number:

ADP006648

Title:

Device Effects of Various Zr/Ti Ratios of PZT Thin-Films Prepared by SOL-GEL Method,

Descriptive Note:

Corporate Author:

COLORADO UNIV AT COLORADO SPRINGS

Report Date:

1991-04-05

Pagination or Media Count:

12.0

Abstract:

PZT, PbZr sub x Tl sub 1-x 03, thin-films with various ZrTi ratios, 1 000 lead zirconate to 0100 lead titanate, were prepared by the sol-gel method. Basic electric properties, dielectric constant, tan sigma, P-E hysteresis curve, switching properties were measured respectively as a function of composition. Dielectric constant indicated a specific peak value approximately 1100 around the morphotropic phase boundary between tetragonal and rhombohedral phase. Satisfactory low-voltage saturated hysteresis curves were observed for the compositions of PZT9010 through PZT2080. The remanent polarization and the coercive field increased as the titanium content decreased. The result of X-ray measurement showed that the lattice constants of thin-Film PZT are different from bulk ceramics for compatible compositions. The boundary, on which the ca ratio must be 1 rhombohedral phase, was slightly shifted to PbTiO3 side. This distortion in crystal structure is considered to be due to the thin-film effect, which the lattice mismatch between the platinum substrate and the PZT layer, restricted the ions to position into proper cites.

Subject Categories:

  • Ceramics, Refractories and Glass
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE