Pulsed Excimer Laser Deposition of Ferroelectric Thin Films,
PENNSYLVANIA STATE UNIV UNIVERSITY PARK MATERIALS RESEARCH LAB
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Pulsed UV excimer laser ablation was employed to deposit multi-axial, bi-axial and uni-axial ferroelectric compositions of PZT, bismuth titanate and lead germanate respectively. In general, a fluence lower than 2 Jcm2 caused a preferential evaporation of volatile components, resulting in stoichiometric imbalance. However, the fluences beyond 2 Jcm2 enabled the deposition of stoichiometric thin films of multi-component oxide systems. The intrinsic bombardment due to the energetic ablated species during the thin film deposition seemed to influence the composition, structure, orientation and the electrical properties. The electrical characterization of ferroelectric films indicated a dielectric constant of 800-1000, a P, of 32 micron Ccm2 and E sub c of 130KVcm for polycrystalline PZT films and the corresponding quantities were measured to be 150, 7 micron Ccm2 and 20 KVcm for in-situ crystallized c-axis preferred oriented bismuth titanate films. Lead germanate thin films oriented along c-axis OO3 showed a dielectric constant of 30, a P sub r of 2.5 micron Ccm2 and E sub c of 55 KVcm.
- Ceramics, Refractories and Glass
- Manufacturing and Industrial Engineering and Control of Production Systems