Accession Number:

ADP006644

Title:

Filament-Assisted Pulsed Laser Deposition of Epitaxial PbZr subx Ti sub1-x O sub3 Films: Morphological and Electrical Characterization,

Descriptive Note:

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

1991-04-05

Pagination or Media Count:

15.0

Abstract:

A modification of the conventional pulsed laser deposition technique was employed, whereby a low energy electron-emitting filament was placed between the target and the substrate -20 V filamentsubstrate bias in order to produce reactive species 02- and O- during deposition. Using this modification, epitaxial thin films of PbZrxTil-xO3 PZT, 0x0.6 were prepared in situ on virgin 100 MgO and 100 Pt100 MgO substrates at a substrate temperature of 550 deg C and in an oxygen ambient 0.3 Torr. The topography of films prepared without a filament on virgin MgO were porous and composed of grains of about 1000 A in diameter. As the emission current was increased from 0 to 400 micron A, the grain size decreased to less than 100 A with a concomitant decrease in the porosity. The nucleation of crystallites of other orientations was observed at emission currents greater than about 500 micron A. Trilayer structures PtPZTPt1OOMgo were fabricated for electrical measurements. Non-filament-assisted PZT cells usually failed because of a high probability of conductive paths through the PZT layer. Filament-assisted films were much less prone to this problem. Typical remanent polarizations and coercive fields were 15-20 micron Ccm2 and 30-50 kvcm, respectively.

Subject Categories:

  • Electricity and Magnetism
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE